Black germanium produced by inductively coupled plasma etching. Materials Letters. 2013;94:86-8.
Near-infrared light sensitive polypeptide block copolymer micelles for drug delivery. Journal of Materials Chemistry. 2012;22:7252-7.
Cathodoluminescence and photoluminescence of NV centers. International Journal of Nanoscience. 2012;11.
Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2012;30.
Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices. Optical Materials Express. 2011;1:1165-77.
Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. Journal of Nanoscience and Nanotechnology. 2011;11:9251-5.
Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. Journal of Applied Physics. 2010;108.
Photoexcited carrier relaxation dynamics and terahertz response of photoconductive antennas made on proton bombarded GaAs materials. Journal of Applied Physics. 2010;108:124507.
