Département de physique | Université de Sherbrooke

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Prochains séminaires

mar, 05/21/2013 - 12:30

Gabriel Poulin-Lamarre
- 12:30
- D3-2040
- To be announced
- Voir Google Calendar

lun, 05/27/2013 - 12:30

Susanne Butz, Physikalisches Institut, Karlsruhe Institute of Technology, Karlsruhe, Germany.
- 12:30
- D3-2040
- Title: A Tunable Josephson Metamaterial
  
  Abstract: We present experimental data on a tunable magnetic metamaterial consisting of rf-SQUIDs. A metamaterial is a medium constructed of artifical elements, so- called meta-atoms, that interact in a specific way with an incoming electromagnetic wave. The size of and the distance between the individual meta-atoms is much smaller than the wavelength. Our metamaterial consists of one-dimensional arrays of 27 rf-SQUIDs, one chain placed inside each of the gaps of a coplanar waveguide. Due to the nonlinear inductance of the rf-SQUID, its resonance frequency is tunable in situ by applying a dc magnetic field. We demonstrate that this results in tunable effective parameters of our metamaterial. In order to obtain the effective magnetic permeability from the measured data, we employ a technique that uses only the complex transmission coefficient S21.
- Voir Google Calendar

lun, 06/03/2013 - 12:30

Bhaskar Roy Bardhan, Department of Physics and Astronomy, Louisiana State University
- 12:30
- D3-2040
- To be annonced
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mer, 06/05/2013 - 10:45

INTRIQ : Lilian Childress, McGill
- 10:45
- D1-2165
- Title: Spins and photons: toward quantum networks in diamond
  
  Abstract: Long-lived electronic and nuclear spin states have made nitrogen-vacancy (NV) defects in diamond a leading candidate for solid-state quantum information processing. Moreover, their coherent optical transitions open opportunities for quantum communication. This talk will consider the motivation and requirements for optically-networked quantum devices, and explore challenges and opportunities for realizing them in diamond. In particular, the resonant excitation and emission in these defect centers enables single shot spin detection as well as observation of two-photon quantum interference; these two capabilities have enabled measurement-based entanglement between remote NV centers.
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lun, 06/10/2013 - 12:30

Frank Verstraete , Université de Vienne
- 12:30
- D3-2040
- To be announced
- Voir Google Calendar

Hadj Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, et al. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. Journal of Nanoscience and Nanotechnology. 2011;11:9251-5.

Hadj Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, et al. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. Journal of Applied Physics. 2010;108.

Zaâboub Z, Ilahi B, Salem B, Aimez V, Morris D, Sfaxi L, et al. Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots. Journal of Applied Physics. 2010;107.

Dupuy E, Morris D, Pauc N, Aimez V, Gendry M, Drouin D. Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging. Applied Physics Letters. 2009;94.

Ilahi B, Zaâboub Z, Salem B, Morris D, Aimez V, Sfaxi L, et al. Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing. Materials Science in Semiconductor Processing. 2009;12:71-4.

Dupuy E, Xu G, Regreny P, Robach Y, Gendry M, Chauvin N, et al. Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(OOI). In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials.; 2008.

Zaâboub Z, Ilahi B, Sfaxi L, Maaref H, Salem B, Aimez V, et al. Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots. Nanotechnology. 2008;19.

Zaâboub Z, Ilahi B, Sfaxi L, Maaref H, Salem B, Aimez V, et al. Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots’ intermixing. Physics Letters, Section A: General, Atomic and Solid State Physics. 2008;372:4714-7.

Ilahi B, Salem B, Aimez V, Sfaxi L, Maaref H, Morris D. Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing. Nanotechnology. 2006;17:3707-9.

Salem B, Morris D, Salissou Y, Aimez V, Charlebois SA, Chicoine M, et al. Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2006;24:774-7.

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