Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

TitleImpact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
Publication TypeJournal Article
Year of Publication2010
AuthorsHadj Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Turala A, Regreny P, Gendry M
JournalJournal of Applied Physics
Volume108