InSitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-Gated devices

TitleInSitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-Gated devices
Publication TypeJournal Article
Year of Publication2008
AuthorsBuizert C, Koppens FHL, Pioro-Ladrière M, Tranitz H-P, Vink IT, Tarucha S, Wegscheider W, Vandersypen LMK
JournalPhysical Review Letters
Volume101