InSitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-Gated devices
| Title | InSitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-Gated devices |
| Publication Type | Journal Article |
| Year of Publication | 2008 |
| Authors | Buizert C, Koppens FHL, Pioro-Ladrière M, Tranitz H-P, Vink IT, Tarucha S, Wegscheider W, Vandersypen LMK |
| Journal | Physical Review Letters |
| Volume | 101 |
