I will describe some novel behavior that can be seen in multilayered devices constructed out of strongly correlated electron materials. Recent experimental work on multilayered oxide systems has begun to uncover the tip of the iceberg in new quantum engineering from inhomogeneous quantum systems. The many-body problem for such devices is solved by using inhomogeneous dynamical mean-field theory. The physical behavior I will describe includes the crossover from tunneling to Ohm's law transport, the enhancement of thermoelectric effects due to electronic charge reconstruction, the appearance of a nested "fragile" Fermi-liquid in finite thickness Mott insulators sandwiched between metallic leads for low enough temperature, and many body effects on capacitance. I will also describe some of the algorithmic and computational issues of such calculations.