.
2013. Black germanium produced by inductively coupled plasma etching. Materials Letters. 94:86-88.
.
2012. Cathodoluminescence and photoluminescence of NV centers. International Journal of Nanoscience. 11
.
2012. Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 30
.
2012. Near-infrared light sensitive polypeptide block copolymer micelles for drug delivery. Journal of Materials Chemistry. 22:7252-7257.
.
2011. Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices. Optical Materials Express. 1:1165-1177.
.
2011. Improved detection sensitivity of D-mannitol crystalline phase content using differential spectral phase shift terahertz spectroscopy measurements. Optics Express. 19:4644-4652.
.
2011. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. Journal of Nanoscience and Nanotechnology. 11:9251-9255.
.
2010. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. Journal of Applied Physics. 108
.
2010. Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots. Journal of Applied Physics. 107
.
2010. Photoexcited carrier relaxation dynamics and terahertz response of photoconductive antennas made on proton bombarded GaAs materials. Journal of Applied Physics. 108:124507.
.
2009. Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging. Applied Physics Letters. 94
.
2009. Fabrication and THz loss measurements of porous subwavelength fibers using a directional coupler method. Optics Express. 17:8012-8028.
.
2009. High resolution imaging of INAS/INP Single Quantum Dots by Low-voltage cathodoluminescence. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. :355-357.
.
2009. Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing. Materials Science in Semiconductor Processing. 12:71-74.
.
2009. A new two-photon-sensitive block copolymer nanocarrier. Angewandte Chemie - International Edition. 48:3329-3332.
.
2009. Two-photon absorption cross section of excited phthalocyanines by a femtosecond Ti-sapphire laser. Photochemical and Photobiological Sciences. 8:391-395.
.
2009. [beta]-NMR investigation of the vortex lattice near the interface of silver and Pr1.85Ce0.15CuO4-[delta] thin films. Physica B: Condensed Matter. 404:727-729.
.
2009. β-NMR investigation of the vortex lattice near the interface of silver and Pr1.85 Ce0.15 CuO4 - δ thin films. Physica B: Condensed Matter. 404:727-729.
.
2008. Detection of explosives using THz time domain spectroscopy. Proceedings of SPIE - The International Society for Optical Engineering. 6796
.
2008. Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(OOI). Conference Proceedings - International Conference on Indium Phosphide and Related Materials.
.
2008. Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots’ intermixing. Physics Letters, Section A: General, Atomic and Solid State Physics. 372:4714-4717.
.
2007. Electrical characteristics and simulations of self-switching-diodes in SOI technology. Solid-State Electronics. 51:1245-1249.
.
2007. First report on self-switching-diodes in SOI. Proceedings - IEEE International SOI Conference. :149-150.
