Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing

TitrePost-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing
Type de publicationJournal Article
Nouvelles publications2006
AuteursIlahi B, Salem B, Aimez V, Sfaxi L, Maaref H, Morris D
JournalNanotechnology
Volume17
Pagination3707-3709