Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
| Titre | Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes |
| Type de publication | Journal Article |
| Nouvelles publications | 2010 |
| Auteurs | Hadj Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Turala A, Regreny P, Gendry M |
| Journal | Journal of Applied Physics |
| Volume | 108 |
