Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

TitreImpact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
Type de publicationJournal Article
Nouvelles publications2010
AuteursHadj Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Turala A, Regreny P, Gendry M
JournalJournal of Applied Physics
Volume108