Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

TitreIon channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP
Type de publicationJournal Article
Nouvelles publications2005
AuteursBarba D, Salem B, Morris D, Aimez V, Beauvais J, Chicoine M, Schiettekatte F
JournalJournal of Applied Physics
Volume98
Pagination1-5