InSitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-Gated devices

TitreInSitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-Gated devices
Type de publicationJournal Article
Nouvelles publications2008
AuteursBuizert C, Koppens FHL, Pioro-Ladrière M, Tranitz H-P, Vink IT, Tarucha S, Wegscheider W, Vandersypen LMK
JournalPhysical Review Letters
Volume101