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Auteur Mots clés [ Titre(Desc)] Type Année
Filtres: First Letter Of Last Name is S and Auteur is Salem, B.  [Réinitialiser tous les filtres]
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B. Salem, Morris, D., Aimez, V., Beerens, J., Beauvais, J., et Houde, D., « High performance terahertz source using ion implanted photoconductive antenna », in Proceedings of SPIE - The International Society for Optical Engineering, 2005, vol. 5727, p. 193-198.
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M. H. Hadj Alouane, Ilahi, B., Maaref, H., Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., et Gendry, M., « Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes », Journal of Applied Physics, vol. 108, 2010.
A. Beaudoin, Salem, B., Baron, T., Gentile, P., et Morris, D., « Impact of n -type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy », Physical Review B - Condensed Matter and Materials Physics, vol. 89, 2014.
A. Beaudoin, Salem, B., Baron, T., Gentile, P., et Morris, D., « Impact of n -type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy », Physical Review B - Condensed Matter and Materials Physics, vol. 89, 2014.
B. Salem, Morris, D., Aimez, V., Beauvais, J., et Houde, D., « Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials », Semiconductor Science and Technology, vol. 21, p. 283-286, 2006.
Z. Zaâboub, Ilahi, B., Sfaxi, L., Maaref, H., Salem, B., Aimez, V., et Morris, D., « Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots », Nanotechnology, vol. 19, 2008.
B. Ilahi, Zaâboub, Z., Salem, B., Morris, D., Aimez, V., Sfaxi, L., et Maaref, H., « Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing », Materials Science in Semiconductor Processing, vol. 12, p. 71-74, 2009.
D. Barba, Salem, B., Morris, D., Aimez, V., Beauvais, J., Chicoine, M., et Schiettekatte, F., « Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP », Journal of Applied Physics, vol. 98, p. 1-5, 2005.