Publications

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Conference Paper
V. Aimez, Beauvais, J., Beerens, J., and Morris, D., Development of a spatially selective, high resolution quantum well intermixing (HRQWI) method based on low energy ion implantation, in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2002, vol. 2, pp. 847-848.
D. Morris, Perret, N., Riabinina, D., Beerens, J., Aimez, V., Beauvais, J., and Fafard, S., Dynamics of photo-excited carriers in self-assembled quantum dots, in Proceedings of SPIE - The International Society for Optical Engineering, 2002, vol. 4833, pp. 705-710.
B. Salem, Morris, D., Aimez, V., Beerens, J., Beauvais, J., and Houde, D., High performance terahertz source using ion implanted photoconductive antenna, in Proceedings of SPIE - The International Society for Optical Engineering, 2005, vol. 5727, pp. 193-198.
E. Dupuy, Xu, G., Regreny, P., Robach, Y., Gendry, M., Chauvin, N., Bru-Chevallier, C., Patriarche, G., Morris, D., Pauc, N., Aimez, V., and Drouin, D., Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(OOI), in Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2008.
V. Aimez, Beauvais, J., Drouin, D., Beerens, J., Morris, D., and Jandl, S., Low energy ion implantation induced control of InP-based heterostructure properties, in Proceedings of SPIE - The International Society for Optical Engineering, 2001, vol. 4468, pp. 95-104.
Journal Article
B. Salem, Aimez, V., Morris, D., Turala, A., Regreny, P., and Gendry, M., Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing, Applied Physics Letters, vol. 87, pp. 1-3, 2005.
E. Dupuy, Morris, D., Pauc, N., Aimez, V., Gendry, M., and Drouin, D., Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging, Applied Physics Letters, vol. 94, 2009.
M. H. H. Alouane, Helali, A., Morris, D., Maaref, H., Aimez, V., Salem, B., Gendry, M., and Ilahi, B., Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution, Journal of Luminescence, vol. 145, pp. 595-599, 2014.
J. Zribi, Ilahi, B., Morris, D., Aimez, V., and Arès, R., Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers, Journal of Crystal Growth, vol. 384, pp. 21-26, 2013.
M. H. Hadj Alouane, Ilahi, B., Maaref, H., Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., and Gendry, M., Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes, Journal of Applied Physics, vol. 108, 2010.
B. Salem, Morris, D., Aimez, V., Beauvais, J., and Houde, D., Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials, Semiconductor Science and Technology, vol. 21, pp. 283-286, 2006.
Z. Zaâboub, Ilahi, B., Sfaxi, L., Maaref, H., Salem, B., Aimez, V., and Morris, D., Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots, Nanotechnology, vol. 19, 2008.
B. Ilahi, Zaâboub, Z., Salem, B., Morris, D., Aimez, V., Sfaxi, L., and Maaref, H., Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing, Materials Science in Semiconductor Processing, vol. 12, pp. 71-74, 2009.
D. Barba, Salem, B., Morris, D., Aimez, V., Beauvais, J., Chicoine, M., and Schiettekatte, F., Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP, Journal of Applied Physics, vol. 98, pp. 1-5, 2005.
V. Aimez, Beauvais, J., Beerens, J., Morris, D., Lim, H. S., and Ooi, B. - S., Low-energy ion-implantation-induced quantum-well intermixing, IEEE Journal on Selected Topics in Quantum Electronics, vol. 8, pp. 870-879, 2002.
S. Ménard, Beerens, J., Morris, D., Aimez, V., Beauvais, J., and Fafard, S., Magneto-photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, pp. 1501-1507, 2002.
Z. Zaâboub, Ilahi, B., Sfaxi, L., Maaref, H., Salem, B., Aimez, V., and Morris, D., Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots’ intermixing, Physics Letters, Section A: General, Atomic and Solid State Physics, vol. 372, pp. 4714-4717, 2008.
Z. Zaâboub, Ilahi, B., Salem, B., Aimez, V., Morris, D., Sfaxi, L., and Maaref, H., Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots, Journal of Applied Physics, vol. 107, 2010.
B. Ilahi, Salem, B., Aimez, V., Sfaxi, L., Maaref, H., and Morris, D., Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing, Nanotechnology, vol. 17, pp. 3707-3709, 2006.
B. Salem, Morris, D., Aimez, V., Beerens, J., Beauvais, J., and Houde, D., Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates, Journal of Physics Condensed Matter, vol. 17, pp. 7327-7333, 2005.
M. H. Hadj Alouane, Ilahi, B., Maaref, H., Salem, B., Aimez, V., Morris, D., and Gendry, M., Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing, Journal of Nanoscience and Nanotechnology, vol. 11, pp. 9251-9255, 2011.
B. Salem, Morris, D., Salissou, Y., Aimez, V., Charlebois, S. A., Chicoine, M., and Schiettekatte, F., Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 24, pp. 774-777, 2006.
B. Ilahi, Nasr, O., Paquette, B., Hadj Alouane, M. H., Chauvin, N., Salem, B., Sfaxi, L., Bru-Chevalier, C., Morris, D., Ares, R., Aimez, V., and Maaref, H., Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing, Journal of Alloys and Compounds, vol. 656, pp. 132 - 137, 2016.