Publications

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Conference Paper
B. Salem, Morris, D., Aimez, V., Beerens, J., Beauvais, J., and Houde, D., High performance terahertz source using ion implanted photoconductive antenna, in Proceedings of SPIE - The International Society for Optical Engineering, 2005, vol. 5727, pp. 193-198.
Journal Article
B. Salem, Aimez, V., Morris, D., Turala, A., Regreny, P., and Gendry, M., Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing, Applied Physics Letters, vol. 87, pp. 1-3, 2005.
M. H. H. Alouane, Helali, A., Morris, D., Maaref, H., Aimez, V., Salem, B., Gendry, M., and Ilahi, B., Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution, Journal of Luminescence, vol. 145, pp. 595-599, 2014.
M. H. Hadj Alouane, Ilahi, B., Maaref, H., Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., and Gendry, M., Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes, Journal of Applied Physics, vol. 108, 2010.
A. Beaudoin, Salem, B., Baron, T., Gentile, P., and Morris, D., Impact of n -type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy, Physical Review B - Condensed Matter and Materials Physics, vol. 89, 2014.
A. Beaudoin, Salem, B., Baron, T., Gentile, P., and Morris, D., Impact of n -type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy, Physical Review B - Condensed Matter and Materials Physics, vol. 89, 2014.
B. Salem, Morris, D., Aimez, V., Beauvais, J., and Houde, D., Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials, Semiconductor Science and Technology, vol. 21, pp. 283-286, 2006.
Z. Zaâboub, Ilahi, B., Sfaxi, L., Maaref, H., Salem, B., Aimez, V., and Morris, D., Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots, Nanotechnology, vol. 19, 2008.
B. Ilahi, Zaâboub, Z., Salem, B., Morris, D., Aimez, V., Sfaxi, L., and Maaref, H., Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing, Materials Science in Semiconductor Processing, vol. 12, pp. 71-74, 2009.
D. Barba, Salem, B., Morris, D., Aimez, V., Beauvais, J., Chicoine, M., and Schiettekatte, F., Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP, Journal of Applied Physics, vol. 98, pp. 1-5, 2005.
Z. Zaâboub, Ilahi, B., Sfaxi, L., Maaref, H., Salem, B., Aimez, V., and Morris, D., Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots’ intermixing, Physics Letters, Section A: General, Atomic and Solid State Physics, vol. 372, pp. 4714-4717, 2008.
Z. Zaâboub, Ilahi, B., Salem, B., Aimez, V., Morris, D., Sfaxi, L., and Maaref, H., Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots, Journal of Applied Physics, vol. 107, 2010.
B. Ilahi, Salem, B., Aimez, V., Sfaxi, L., Maaref, H., and Morris, D., Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing, Nanotechnology, vol. 17, pp. 3707-3709, 2006.
B. Salem, Morris, D., Aimez, V., Beerens, J., Beauvais, J., and Houde, D., Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates, Journal of Physics Condensed Matter, vol. 17, pp. 7327-7333, 2005.
M. H. Hadj Alouane, Ilahi, B., Maaref, H., Salem, B., Aimez, V., Morris, D., and Gendry, M., Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing, Journal of Nanoscience and Nanotechnology, vol. 11, pp. 9251-9255, 2011.
B. Salem, Morris, D., Salissou, Y., Aimez, V., Charlebois, S. A., Chicoine, M., and Schiettekatte, F., Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 24, pp. 774-777, 2006.
B. Ilahi, Nasr, O., Paquette, B., Hadj Alouane, M. H., Chauvin, N., Salem, B., Sfaxi, L., Bru-Chevalier, C., Morris, D., Ares, R., Aimez, V., and Maaref, H., Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing, Journal of Alloys and Compounds, vol. 656, pp. 132 - 137, 2016.