Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

TitleIon channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP
Publication TypeJournal Article
Year of Publication2005
AuthorsBarba, D, Salem, B, Morris, D, Aimez, V, Beauvais, J, Chicoine, M, Schiettekatte, F
JournalJournal of Applied Physics
Volume98
Pagination1-5
Full Text
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