Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing

TitleTemperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing
Publication TypeJournal Article
Year of Publication2011
AuthorsHadj Alouane, MH, Ilahi, B, Maaref, H, Salem, B, Aimez, V, Morris, D, Gendry, M
JournalJournal of Nanoscience and Nanotechnology
Volume11
Pagination9251-9255
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84857152386&partnerID=40&md5=4a40799d3cce6f907668aef7ec06f9ab
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