Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

TitreImpact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
Type de publicationJournal Article
Nouvelles publications2010
AuteursHadj Alouane, MH, Ilahi, B, Maaref, H, Salem, B, Aimez, V, Morris, D, Turala, A, Regreny, P, Gendry, M
JournalJournal of Applied Physics
Volume108
Texte complet
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