Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing

TitreTemperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing
Type de publicationJournal Article
Nouvelles publications2011
AuteursHadj Alouane, MH, Ilahi, B, Maaref, H, Salem, B, Aimez, V, Morris, D, Gendry, M
JournalJournal of Nanoscience and Nanotechnology
Volume11
Pagination9251-9255
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84857152386&partnerID=40&md5=4a40799d3cce6f907668aef7ec06f9ab
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