The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes

TitreThe impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes
Type de publicationJournal Article
Nouvelles publications2011
AuteursFarhi, G, Morris, D, Charlebois, SA, Raskin, J-P
JournalNanotechnology
Volume22
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-80053502828&partnerID=40&md5=4a19e4962825ed711c4bf8ffb1a11a7c
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