Ching-Tzu Chen

IBM TJ Watson Research Center, Yorktown Heights
Spin Hall Tunneling Spectroscopy and Its Application to Topological Insulators

Spin Hall effect is the spin version of the well-known Hall effect – when a charge current is applied in materials with large spin-orbit coupling, electrons with opposite spins accumulate at opposite edges of the channel. This is an efficient way of generating pure spin current for spintronics applications, such as magnetic switching in MRAM and spin injection in spin-logic devices. In this talk, I will present our newly developed tunneling spectroscopy technique for accurate characterizations of the spin-charge conversion efficiency in spin Hall metals.[1] The spin-Hall tunneling spectroscopy helps identify the spin Hall mechanisms in different systems. I will also present our latest study on topological insulators using this technique and demonstrate how one can extract the effective spin polarization of the topological surface states in real devices.

[1] L. Liu, C.-T. Chen and J. Z. Sun, Spin Hall Effect Tunneling Spectrscopy, Nature Phys. 10, 561 (2014).

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