Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

TitreCritical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
Type de publicationJournal Article
Nouvelles publications2015
AuteursFekecs, A, Chicoine, M, Ilahi, B, SpringThorpe, AJ, Schiettekatte, F, Morris, D, Charette, PG, Arès, R
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume359
Pagination99-106
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84938675213&partnerID=40&md5=9f164604548e00aa58ec94b3bf0adff8
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