Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

TitreThermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing
Type de publicationJournal Article
Nouvelles publications2016
AuteursIlahi, B, Nasr, O, Paquette, B, Hadj Alouane, MH, Chauvin, N, Salem, B, Sfaxi, L, Bru-Chevalier, C, Morris, D, Ares, R, Aimez, V, Maaref, H
JournalJournal of Alloys and Compounds
Volume656
Pagination132 - 137
Année de publication01/2016
ISBN09258388
DOI10.1016/j.jallcom.2015.09.231
Importer un fichierJournal of Alloys and Compounds
Texte complet
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