Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells

TitreEffect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells
Type de publicationJournal Article
Nouvelles publications2016
AuteursZribi, J, Ilahi, B, Paquette, B, Jaouad, A, Thériault, O, Hinzer, K, Cheriton, R, Patriarche, G, Fafard, S, Aimez, V, Arès, R, Morris, D
JournalIEEE Journal of Photovoltaics
Volume6
Start Page584
Mots clésChemical beam epitaxy, Epitaxial growth, gallium arsenide, III-V semiconductor materials, Nonhomogeneous media, Periodic structures, Photoconductivity, Photovoltaic cells, Quantum dots, solar cells
DOI10.1109/JPHOTOV.2016.2514708
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